? semiconductor components industries, llc, 2008 october, 2008 ? rev. 2 1 publication order number: NTLJD2104P/d NTLJD2104P power mosfet ? 12 v, ? 4.3 a, cool dual p ? channel, 2x2 mm, wdfn package features ? wdfn 2x2 mm package with exposed drain pads for excellent thermal conduction ? lowest r ds(on) in 2x2 mm package ? footprint same as sc ? 88 package ? low profile (<0.8 mm) for easy fit in thin environments ? bidirectional current flow with common source configuration ? these are pb ? free devices applications ? optimized for battery and load management applications in portable equipment ? li ion battery charging and protection circuits ? dual high side load switch maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain ? to ? source voltage v dss ? 12 v gate ? to ? source voltage v gs 8.0 v continuous drain current (note 1) steady state t j = 25 c i d ? 3.5 a t j = 85 c ? 2.5 t 5 s t j = 25 c ? 4.3 power dissipation (note 1) steady state t j = 25 c p d 1.5 w t 5 s 2.3 continuous drain current (note 2) steady state t j = 25 c i d ? 2.4 a t j = 85 c ? 1.7 power dissipation (note 2) t j = 25 c p d 0.7 w pulsed drain current t p = 10 s i dm ? 20 a operating junction and storage temperature t j , t stg ? 55 to 150 c source current (body diode) (note 2) i s ? 1.5 a lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [2 oz] including traces). 2. surface mounted on fr4 board using the minimum recommended pad size of 30 mm 2 , 2 oz. cu. http://onsemi.com ? 12 v 85 m @ ? 2.5 v 60 m @ ? 4.5 v r ds(on) typ ? 3.0 a i d max v (br)dss 110 m @ ? 1.8 v 140 m @ ? 1.5 v see detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. ordering information g1 s1 p ? channel mosfet d1 jc = specific device code m = date code = pb ? free package (note: microdot may be in either location) jcm 1 2 3 6 5 4 wdfn6 case 506an marking diagram d2 d1 pin 1 g2 s2 p ? channel mosfet d2 1 2 3 6 5 4 s1 g1 d2 d1 g2 s2 (top view) pin connections d1 d2 190 m @ ? 1.3 v ? 3.0 a ? 0.7 a ? 0.5 a ? 0.2 a 230 m @ ? 1.2 v ? 0.2 a
NTLJD2104P http://onsemi.com 2 thermal resistance ratings parameter symbol max unit single operation (self ? heated) junction ? to ? ambient ? steady state (note 3) r ja 83 c/w junction ? to ? ambient ? steady state min pad (note 4) r ja 177 junction ? to ? ambient ? t 5 s (note 3) r ja 54 dual operation (equally heated) junction ? to ? ambient ? steady state (note 3) r ja 58 c/w junction ? to ? ambient ? steady state min pad (note 4) r ja 133 junction ? to ? ambient ? t 5 s (note 3) r ja 40 3. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [2 oz] including traces). 4. surface mounted on fr4 board using the minimum recommended pad size (30 mm 2 , 2 oz cu). mosfet electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = ? 250 a ? 12 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j i d = ? 250 a, ref to 25 c ? 7.0 mv/ c zero gate voltage drain current i dss v ds = ? 12 v, v gs = 0 v t j = 25 c ? 1.0 a t j = 85 c ? 10 gate ? to ? source leakage current i gss v ds = 0 v, v gs = 8.0 v 100 na on characteristics (note 5) gate threshold voltage v gs(th) v gs = v ds , i d = ? 250 a ? 0.35 ? 0.6 ? 0.8 v gate threshold temperature coefficient v gs(th) /t j 2.4 mv/ c drain ? to ? source on ? resistance r ds(on) v gs = ? 4.5, i d = ? 3.0 a 60 90 m v gs = ? 2.5, i d = ? 3.0 a 85 120 v gs = ? 1.8, i d = ? 0.7 a 110 150 v gs = ? 1.5, i d = ? 0.5 a 140 200 v gs = ? 1.3, i d = ? 0.2 a 190 v gs = ? 1.2, i d = ? 0.2 a 230 forward transconductance g fs v ds = ? 10 v, i d = ? 3.0 a 6.0 s charges, capacitances and gate resistance input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = ? 6.0 v 467 pf output capacitance c oss 125 reverse transfer capacitance c rss 79 total gate charge q g(tot) v gs = ? 4.5 v, v ds = ? 6.0 v, i d = ? 3.0 a 5.5 8.0 nc threshold gate charge q g(th) 0.3 gate ? to ? source charge q gs 0.8 gate ? to ? drain charge q gd 1.5 gate resistance r g 12.2 5. pulse test: pulse width 300 s, duty cycle 2%. 6. switching characteristics are independent of operating junction temperatures.
NTLJD2104P http://onsemi.com 3 mosfet electrical characteristics (t j = 25 c unless otherwise noted) parameter unit max typ min test conditions symbol switching characteristics (note 6) turn ? on delay time t d(on) v gs = ? 4.5 v, v dd = ? 6.0 v, i d = ? 3.0 a, r g = 2.0 6.6 ns rise time t r 12.3 turn ? off delay time t d(off) 14 fall time t f 16.2 drain ? source diode characteristics forward recovery voltage v sd v gs = 0 v, i s = ? 1.0 a t j = 25 c ? 0.7 ? 1.0 v t j = 85 c ? 0.65 reverse recovery time t rr v gs = 0 v, d isd /d t = 100 a/ s, i s = ? 1.0 a 23 45 ns charge time t a 8.0 discharge time t b 15 reverse recovery time q rr 10 20 nc 5. pulse test: pulse width 300 s, duty cycle 2%. 6. switching characteristics are independent of operating junction temperatures. ordering information device package shipping ? NTLJD2104Ptbg wdfn6 (pb ? free) 3000 / tape & reel NTLJD2104Ptag wdfn6 (pb ? free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
NTLJD2104P http://onsemi.com 4 typical characteristics figure 1. on ? region characteristics figure 2. transfer characteristics ? v ds , drain ? to ? source voltage (v) ? v gs , gate ? to ? source voltage (v) 4.5 3.5 3.0 2.5 2.0 1.0 0.5 0 0 2.0 4.0 6.0 8.0 10 12 14 2.0 1.75 1.5 1.25 1.0 0.75 0.5 0 2.0 4.0 6.0 8.0 10 figure 3. on ? resistance vs. gate ? to ? source voltage figure 4. on ? resistance vs. drain current and gate voltage ? v gs , gate voltage (v) ? i d , drain current (a) 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.02 0.04 0.06 0.08 0.10 0.12 0.18 0.20 10 8.0 6.0 4.0 2.0 0 0 0.05 0.10 0.20 0.30 0.35 0.45 0.50 figure 5. on ? resistance variation with temperature figure 6. drain ? to ? source leakage current vs. voltage t j , junction temperature ( c) ? v ds , drain ? to ? source voltage (v) 125 100 75 50 25 0 ? 25 ? 50 0.7 0.8 0.9 1.0 1.1 1.2 1.4 1.5 11 10 8 6 4 3 2 1 1000 10,000 ? i d , drain current (a) ? i d , drain current (a) r ds(on) , drain ? to ? source resistance ( ) r ds(on) , normalized drain ? to ? source resistance ( ) i dss , leakage (na) 1.5 4.0 5.0 0.14 0.16 5.0 0.15 0.25 0.40 r ds(on) , drain ? to ? source resistance ( ) v gs = ? 4.5 v to ? 3 v ? 2.5 v ? 2.0 v ? 1.8 v ? 1.5 v ? 1.2 v v ds = ? 5.0 v t j = 25 c t j = 125 c t j = ? 55 c t j = 25 c i d = ? 3 a v gs = ? 1.5 v t j = 25 c ? 1.8 v ? 2.0 v ? 2.5 v ? 4.5 v 150 1.3 v gs = ? 4.5 v i d = ? 3 a 579 12 t j = 125 c t j = 150 c
NTLJD2104P http://onsemi.com 5 typical characteristics c rss figure 7. capacitance variation figure 8. gate ? to ? source and drain ? to ? source voltage vs. total charge ? v ds , drain ? to ? source voltage (v) q g , total gate charge (nc) 12 10 8 6 4 2 0 0 100 200 300 500 600 700 800 6 5 4 3 2 1 0 0 1 2 3 4 5 figure 9. resistive switching time variation vs. gate resistance figure 10. diode forward voltage vs. current r g , gate resistance ( ) ? v sd , source ? to ? drain voltage (v) 100 10 1 1 10 100 1000 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.1 1 10 100 figure 11. threshold voltage figure 12. single pulse maximum power dissipation t j , temperature ( c) single pulse time (s) 125 100 75 50 25 0 ? 25 ? 50 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1000 100 10 1 0.1 0.01 0.001 0 5 10 15 20 25 30 c, capacitance (pf) ? v gs , gate ? to ? source voltage (v) t, time (ns) ? i s , source current (a) ? v gs(th) (v) power (w) 400 v gs = 0 v t j = 25 c f = 1 mhz c iss c oss q t q gs q gd ? v ds ? v gs v ds = ? 6 v i d = ? 3 a t j = 25 c 0 2 4 6 8 ? v ds , drain ? to ? source voltage (v) v gs = ? 4.5 v v dd = ? 6 v i d = ? 3 a t d(off) t d(on) t f t r t j = 25 c t j = 150 c 150 i d = ? 250 a *see note 2 on page 1
NTLJD2104P http://onsemi.com 6 typical characteristics figure 13. maximum rated forward biased safe operating area ? v ds , drain ? to ? source voltage (v) 100 10 1 0.1 0.01 0.1 1 10 100 figure 14. fet thermal response t, time (s) 1e ? 06 0.1 1 10 100 1000 ? i d , drain current (a) r(t), effective transient thermal resistance *see note 2 on page 1 100 s 1 ms 10 ms dc v gs = ? 8 v single pulse t c = 25 c r ds(on) limit thermal limit package limit *see note 2 on page 1 1e ? 05 1e ? 04 1e ? 03 1e ? 02 1e ? 01 1e+00 1e+01 1e+02 1e+03 duty cycle = 0.5 single pulse 0.05 0.1 0.2
NTLJD2104P http://onsemi.com 7 package dimensions 2x c a seating plane d b e 0.10 c a3 a a1 2x 2x 0.10 c wdfn6 2x2 case 506an ? 01 issue c dim a min max millimeters 0.70 0.80 a1 0.00 0.05 a3 0.20 ref b 0.25 0.35 d 2.00 bsc d2 0.57 0.77 0.90 1.10 e 2.00 bsc 0.25 ref e2 e 0.65 bsc k 0.20 0.30 l 0.15 ref j pin one reference 0.08 c 0.10 c 6x a 0.10 c note 3 l e d2 e2 b b 3 6 6x 1 k 4 6x 6x 0.05 c 4x d2 2x j 6x 2.30 6x pitch bottom view 0.25 0.25 0.72 0.35 0.65 1.05 6x 0.43 dimensions: millimeters 1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. NTLJD2104P/d cool is a trademark of semiconductor components industries, llc (scillc). publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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